DMG3407SSN advance information p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) i d t a = 25c -30v 50m ? @ v gs = -10v -4.0a 72m ? @ v gs = -4.5v -3.3a description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? load switch ? dc-dc converters ? power management functions features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? lead-free finish; rohs compliant (note 1) ? halogen and antimony free. ?green? device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sc59 ? case material ? molded plasti c. ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte tin solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.014 grams (approximate) ordering information (note 3) part number case packaging DMG3407SSN-7 sc59 3000 / tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. no purposely added lead. halogen and antimony free marking information date code key year 2010 2011 2012 2013 2014 2015 2016 code x y z a b c d month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sc59 top view pin configuration source gate drain internal schematic d g s g32 = product type marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september) g32 ym product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com free datasheet http:///
DMG3407SSN advance information maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = -10v steady state t a = 25c t a = 70c i d -4.0 -3.2 a t<10s t a = 25c t a = 70c i d -4.6 -3.6 a continuous drain current (note 5) v gs = -4.5v steady state t a = 25c t a = 70c i d -3.3 -2.6 a t<10s t a = 25c t a = 70c i d -3.9 -3.1 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm -30 a maximum body diode forward current (note 5) i s -2.0 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 4) t a = 25c p d 1.1 w t a = 70c 0.7 thermal resistance, junction to ambient (note 4) steady state r ja 166 c/w t<10s 118 total power dissipation (note 5) t a = 25c p d 1.8 w t a = 70c 1.1 thermal resistance, junction to ambient (note 5) steady state r ja 98 c/w t<10s 71 thermal resistance, junction to case (note 5) r jc 18 operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @ t a = 25c unless otherwise stated characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss -30 - - v v gs = 0v, i d = -250 a zero gate voltage drain current t j = 25c i dss - - -1 a v ds = -30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) -1.0 -1.5 -2.1 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - 39 50 m v gs = -10v, i d = -4.1a - 56 72 v gs = -4.5v, i d = -3.0a forward transfer admittance |y fs | - 8.2 - s v ds = -5v, i d = -4a diode forward voltage v sd - -0.75 -1.1 v v gs = 0v, i s = -1a dynamic characteristics (note 7) input capacitance c iss 466 582 700 pf v ds = -15v, v gs = 0v, f = 1.0mhz output capacitance c oss 80 114 148 reverse transfer capacitance c rss 47 76 105 gate resistance r g 2 5 8 v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g 10.6 13.3 16 nc v gs = -10v, v ds = -15v, i d = -4a total gate charge q g 5.2 6.5 8.5 v gs = -4.5v, v ds = -15v,i d = -4a gate-source charge q g s 1.3 1.7 2 gate-drain charge q g d 1.1 1.9 2.7 turn-on delay time t d ( on ) - 6.0 - ns v gs = -10v, v ds = -15v, r l = 3.6 ? , r g = 3 ? turn-on rise time t r - 12.9 - turn-off delay time t d ( off ) - 35.4 - turn-off fall time t f - 30.7 - reverse recovery time t r r 6.8 8.5 10.2 ns i f = 4a, di/dt = 100a/ s reverse recovery charge q r r 5.5 7.0 8.5 nc notes: 2. device mounted on fr-4 pcb with minimum recommended pad layout, single sided. the power dissipation p d is based on t<10s r ja 3. device mounted on 1? x 1? fr-4 pcb with high co verage 2 oz. copper, single sided. the power dissipation p d is based on t<10s r ja 4. short duration pulse test used to minimize self-heating effect. 5. guaranteed by design. not subject to production testing. sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification free datasheet http:///
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